STL19N60M2

NRND
Design Win Education

N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package

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Product overview

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

  • All features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STL19N60M2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL19N60M2
NRND
PowerFLAT 8x8 HV Industrial Ecopack2

STL19N60M2

Package:

PowerFLAT 8x8 HV

Material Declaration**:

Marketing Status

NRND

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STL19N60M2 NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors