N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package

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  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

    Key Features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected

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ECCN (US)
Country of Origin
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STL25N60M2-EP PowerFLAT 8x8 HV Tape And Reel
Active
- - EAR99 CHINA Check Availability

Distributor availability ofSTL25N60M2-EP

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 3000 1 Order Now
AVNET AMERICA 21000 0 Order Now
MOUSER WORLDWIDE 3000 1 Order Now

Distributor reported inventory date: 2019-09-22

Distributor Name

DIGIKEY

Stock

3000

Min.Order

1

Region

WORLDWIDE Order Now

AVNET

Stock

21000

Min.Order

0

Region

AMERICA Order Now

MOUSER

Stock

3000

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-09-22

Get sample

STL25N60M2-EP

Package

PowerFLAT 8x8 HV

Packing Type

Tape And Reel

Unit Price (US$)

*

Distributor availability ofSTL25N60M2-EP

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 3000 1 Order Now
AVNET AMERICA 21000 0 Order Now
MOUSER WORLDWIDE 3000 1 Order Now

Distributor reported inventory date: 2019-09-22

Distributor Name

DIGIKEY

Stock

3000

Min.Order

1

Region

WORLDWIDE Order Now

AVNET

Stock

21000

Min.Order

0

Region

AMERICA Order Now

MOUSER

Stock

3000

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2019-09-22

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS10759
      N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package
      5.0
      404.22 KB
      PDF
      DS10759

      N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
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      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

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      UM1575
      Spice model tutorial for Power MOSFETs
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      AN3106

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HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STL25N60M2-EP PSpice model 2.1
      5.42 KB
      ZIP

      STL25N60M2-EP PSpice model

Publications and Collaterals

    • Description Version Size Action
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
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      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
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      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

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Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STL25N60M2-EP
Active
PowerFLAT 8x8 HV Industrial Ecopack2

STL25N60M2-EP

Package:

PowerFLAT 8x8 HV

Material Declaration**:

PDF XML

Marketing Status

Active

Package

PowerFLAT 8x8 HV

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.