This device is an N-channel Power MOSFET developed using the 7thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
- Ultra low on-resistance
- 100% avalanche tested
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|POWERFLAT 5X6 MIXPLANT RINGCUT||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.