This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
- AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C junction temperature
- 100 % avalanche rated
- Wettable flank package
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 5x6 double island WF||Automotive||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.