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This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C junction temperature
- 100 % avalanche rated
- Wettable flank package
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STL8DN6LF3 | PowerFLAT 5x6 double island WF | Tape And Reel | Active | - | EAR99 | CHINA | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
Featured Videos
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Development Tools
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STL8DN6LF3 | Active | PowerFLAT 5x6 double island WF | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
