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This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- 100% avalanche rated
- Wettable flank package
Featured Videos
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STL8DN6LF3 | Active | PowerFLAT 5x6 double island WF | Automotive | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|
| STL8DN6LF3 | 2 distributors | Buy now | PowerFLAT 5x6 double island WF | Tape And Reel | Active | EAR99 | CHINA |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
