This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Recommended for you
Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STN3P10F6||No availability of distributors reported, please contact our sales office||
|EAR99||NEC||Tape And Reel||SOT-223||-||-||CHINA|