This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \"single feature size\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
- Logic level drive
- 100% avalanche tested
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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