Product overview
Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
-
All features
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
Recommended for you
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
---|
SPICE models (1)
Resource title | Version | Latest update | ||
---|---|---|---|---|
ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STP4N150 | Active | TO-220 | Industrial | Ecopack2 | |
STP4N150
Package:
TO-220Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|
min | max | |||||||||||
STP4N150 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tube | TO-220 | -55 | 150 | CHINA | |
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors