STP6N60M2

NRND
Design Win

N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in TO-220 package

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Product overview

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

  • All features

    • Extremely low gate charge
    • Excellent output capacitance (Coss)profile
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STP6N60M2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STP6N60M2
NRND
TO-220 Industrial Ecopack2

STP6N60M2

Package:

TO-220

Material Declaration**:

Marketing Status

NRND

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STP6N60M2
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STP6N60M2 NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors