ST has extended its portfolio of low-voltage MOSFETs with the introduction of the STPOWER STripFET F8 technology.
This AEC-Q101 qualified technology offers a wide package solution from 30 to 150V to meet all the requirements for very high-power-density solutions.
Cutting both on-resistance and switching losses while optimizing body-diode properties, STripFET F8 technology saves energy and ensures low noise in power conversion, motor control and power distribution circuits.
These N-channel low voltage MOSFETs simplify system designs and increase efficiency in applications such as automotive, computer and peripherals, data center, telecom, solar, power supplies and converters, battery chargers, home and professional appliance, gaming, drones, and more.
- Server and Telecom power
- Battery chargers
- Power Distribution
- Vacuum cleaners
- Power tools
- Game consoles
- Body & Convenience
- Chassis & Safety
- Bidirectional DC/DC Converter
- 48V electrical systems
ST’s advanced STripFET F8 technology ensures excellent switching speed efficiency through low device capacitances that minimize dynamic parameters such as gate-drain charge then boosting the system efficiency. Designers can select higher switching frequencies than STtripFET F7 technology, permitting the use of smaller capacitive and magnetic components. The result is smaller circuit size and reduced bill of material costs as well as an increased power density of the final application.
- Very low conduction losses with increased efficiency and more compact designs
- Low EMI emissions
- Body diode softness and low gate-drain charge to ensure excellent switching behavior
- Tighter gate threshold voltage spread for easier parallel connections
- Enables smaller package solutions