STS9P3LLH6

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Design Win

P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package

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Product overview

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

  • All features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STS9P3LLH6

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STS9P3LLH6
Active
SO-8 Industrial Ecopack2

STS9P3LLH6

Package:

SO-8

Material Declaration**:

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Marketing Status

Active

Package

SO-8

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors