STS9P3LLH6

Active

P-channel -30 V, 12 mOhm typ., -9 A, STripFET H6 Power MOSFET in a SO-8 package

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  • This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key Features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STS9P3LLH6 SO-8 Tape And Reel
Active
0.8 1000 EAR99 CHINA Check Availability

Distributor availability ofSTS9P3LLH6

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 2031 1 Order Now

Distributor reported inventory date: 2020-02-26

Distributor Name

MOUSER

Stock

2031

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-02-26

Get sample

STS9P3LLH6

Package

SO-8

Packing Type

Tape And Reel

Unit Price (US$)

0.8*

Distributor availability ofSTS9P3LLH6

Distributor Name
Region Stock Min. Order Third party link
MOUSER WORLDWIDE 2031 1 Order Now

Distributor reported inventory date: 2020-02-26

Distributor Name

MOUSER

Stock

2031

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-02-26

Marketing Status

Active

Unit Price (US$)

0.8

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS10146
      P-channel -30 V, 12 mΩ typ., -9 A, STripFET™ H6 Power MOSFET in an SO-8 package
      2.0
      596.07 KB
      PDF
      DS10146

      P-channel -30 V, 12 mΩ typ., -9 A, STripFET™ H6 Power MOSFET in an SO-8 package

    • Description Version Size Action
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STS9P3LLH6 PSpice model 1.0
      3.34 KB
      ZIP

      STS9P3LLH6 PSpice model

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STS9P3LLH6
Active
SO-8 Industrial Ecopack2

STS9P3LLH6

Package:

SO-8

Material Declaration**:

Marketing Status

Active

Package

SO-8

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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