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This device is an N-channel Power MOSFET developed using MDmeshâ„¢ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
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Product Specifications (1)
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Technical Notes & Articles (1)
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User Manuals (1)
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Flyers (5 of 6)
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Brochures (1)
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HW Model, CAD Libraries & SVD (1)
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| ZIP | 09 Mar 2018 |
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STW25N60M2-EP |
Active
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TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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| min | max | |||||||||||
| STW25N60M2-EP | 1 distributors | Sample & Buy Buy now |
Active
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EAR99 | NEC | Tube | TO-247 | - | - | CHINA | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
