-
This device is an N-channel Power MOSFET developed using MDmeshâ„¢ M2Â enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STW25N60M2-EP | TO-247 | Tube |
Active
|
- | - | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
STW25N60M2-EP
Package
TO-247Packing Type
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
Featured Videos
Development Tools
-
-
Picture Part number Manufacturer Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS Part NumberMOSFET product finder application for Android and iOS
-
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STW25N60M2-EP |
Active
|
TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
