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STW25N60M2-EP

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N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package

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Product overview

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

  • All features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected
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STMicroelectronics - STW25N60M2-EP

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

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SPICE models (1)

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Version
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STW25N60M2-EP_PSpice_model
1.0 09 Mar 2018
09 Mar 2018
STW25N60M2-EP_PSpice_model 1.0

Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW25N60M2-EP
Active
TO-247 Industrial Ecopack2

STW25N60M2-EP

Package:

TO-247

Material Declaration**:

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More Info

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

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