N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package

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  • These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.

    Key Features

    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • Very low turn-off switching losses
    • 100% avalanche tested
    • Zener-protected

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Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STW27N60M2-EP TO-247 Tube
Active
- - EAR99 CHINA Check Availability

Distributor availability ofSTW27N60M2-EP

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 549 1 Order Now
Farnell Element14 EUROPE 578 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

549

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

578

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-07-16

Get sample

STW27N60M2-EP

Package

TO-247

Packing Type

Tube

Unit Price (US$)

*

Distributor availability ofSTW27N60M2-EP

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 549 1 Order Now
Farnell Element14 EUROPE 578 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

549

Min.Order

1

Region

WORLDWIDE Order Now

Farnell Element14

Stock

578

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-07-16

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS11415
      N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages
      1.0
      822.63 KB
      PDF
      DS11415

      N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STW27N60M2-EP PSpice model 1.0
      10.38 KB
      ZIP

      STW27N60M2-EP PSpice model

Publications and Collaterals

    • Description Version Size Action
      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series 1.0
      720.83 KB
      PDF
      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series 1.0
      755.53 KB
      PDF

      500-650 V MDmesh™ M2: The New ST’s High Voltage Super-junction MOSFET Series

      600-650 V MDmesh™ M2: The ST’s new Super-junction HV MOSFET series

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      Electric vehicle (EV) ecosystem 1.1
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      Electric vehicle (EV) ecosystem

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW27N60M2-EP
Active
TO-247 Industrial Ecopack2

STW27N60M2-EP

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.