Product overview
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast‑recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high‑efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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All features
- AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
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EDA Symbols, Footprints and 3D Models
All resources
| Resource title | Version | Latest update | Actions | Details | Download |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 13 Jan 2016 | 13 Jan 2016 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STW58N60DM2AG | Active Product is in volume production. | TO-247 | Automotive | Ecopack2 | 10 | 2020-09-28T00:00:00.000+02:00 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors