The MDmesh DM2 MOSFETs are ST’s latest fast recovery diode series optimized for full-bridge phase-shifted ZVS topologies. These 400 – 650 V MOSFETs feature a very low recovery charge and time (Qrr, trr) and show up to 40% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines.

Key features and benefits:

  • Improved intrinsic diode reverse recovery time (Trr) for increase efficiency
  • Higher dV/dt capability for improved system reliability
  • AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V MOSFETs

Increase your design’s efficiency with ST’s latest fast-diode MOSEFTs

With an R DS(on) of 0.350 Ω (max.), excellent performance in terms of trr (190 ns typ.), Qrr (1.111 µC typ.) and smooth soft switching behavior, ST's new 500 V MDmesh DM2 fast recovery diode MOSFETs, the STD12N50DM2 and STF12N50DM2, are sure to improve the efficiency of your design. Housed in DPAK and TO-220FP packages, they are ideal for home appliance and consumer applications (full bridge topology) and for lighting (LED drivers) applications based on LLC topology.