The MDmesh™ DM2 series are ST's latest MOSFETs with fast-recovery body diode, optimized for full-bridge phase-shifted ZVS topologies.
These 400 V - 650 V power MOSFETs feature a very low reverse recovery charge and time (Qrr, Trr) and show up to 40% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines. Our fast-recovery diode MOSFETs belong to the STPOWER family.
STPOWER MOSFET key features and benefits
- Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
- Higher dV/dt capability for improved system reliability
- AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V super-junction MOSFETs for automotive applications
Our wide STPOWER product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.