STW70N65DM6-4

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N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO247-4 package

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Product overview

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • All features

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected
    • Excellent switching performance thanks to the extra driving source pin

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STMicroelectronics - STW70N65DM6-4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW70N65DM6-4
Active
TO247-4 Industrial Ecopack2

STW70N65DM6-4

Package:

TO247-4

Material Declaration**:

Marketing Status

Active

Package

TO247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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STW70N65DM6-4 Available at distributors

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EAR99 NEC Tube TO247-4 - - CHINA

STW70N65DM6-4 Active

Package:
TO247-4
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STW70N65DM6-4

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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Distributor reported inventory date:

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors