Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
- Very low on-resistance
- 100% avalanche tested
- Gate charge minimized
- Avalanche ruggedness
- High speed switching
- Very low intrinsic capacitances
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