SD56060

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60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

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Product overview

Description

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.

  • All features

    • Excellent thermal stability
    • Common source configuration push-pull
    • BeO-free package

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SD56060

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SD56060
Active
M246 Industrial Ecopack1

SD56060

Package:

M246

Material Declaration**:

Marketing Status

Active

Package

M246

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SD56060
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