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  • The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz.

    Key Features

    • Excellent thermal stability
    • Common source configuration Push-pull
    • POUT = 60 W with 16 dB gain @ 860 MHz
    • BeO-free package

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Technical Documentation

    • Description Version Size Action
      DS11102
      RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
      1.0
      222.9 KB
      PDF
      DS11102

      RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs

Publications and Collaterals

    • Description Version Size Action
      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz 1.0
      277.49 KB
      PDF
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32 V LDMOS. New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS; IDDE technology boost efficiency & robustness

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