The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz.
- Excellent thermal stability
- Common source configuration Push-pull
- POUT = 60 W with 16 dB gain @ 860 MHz
- BeO-free package
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