BCD

Bipolar-CMOS-DMOS

BCD: a key technology for power integrated circuits.

ST invented the BCD (Bipolar-CMOS-DMOS) technology - revolutionary at the time - in the mid-eighties and has continually developed it ever since. BCD is a family of silicon processes, each of which combines the strengths of three different process technologies onto a single chip.

Analog Bipolar

The best for analog functions.

Digital CMOS

The best for digital processing.

Power DMOS

For power and high voltage elements.

The best of the 3 worlds

This combination of technologies brings many advantages: improved reliability, reduced electromagnetic interference and smaller chip area.

BCD has been widely adopted and continuously improved to address a broad range of products and applications in the fields of power management, analog data acquisition and power actuators.

A recognized innovation

In May 2021, BCD was honored with the prestigious IEEE milestone for ST’s historical “Multiple Silicon Technologies on a Chip” achievement. The IEEE Milestones in Electrical Engineering and Computing program honors significant technical achievements in all areas associated with IEEE.

Milestones recognize the technological innovation and excellence for the benefit of humanity found in unique products, services, seminal papers, and patents.

Multiple Silicon Technologies on a Chip, 1985

Agrate Brianza, Italy, Dedicated 18 May 2021 - IEEE Italy Section

SGS (now STMicroelectronics) pioneered the super-integrated silicon-gate process combining Bipolar, CMOS, and DMOS (BCD) transistors in single chips for complex, power-demanding applications. The first BCD super-integrated circuit, named L6202, was capable of controlling up to 60V-5A at 300 kHz. Subsequent automotive, computer, and industrial applications extensively adopted this process technology, which enabled chip designers flexibly and reliably to combine power, analog, and digital signal processing.

A unique range of BCD platforms

With know-how in process development and chip production honed over more than two decades, ST offers a unique range of BCD process technologies, each addressing specific application needs, with an optimal trade-off between functionality, performance and cost.

Advanced BCD

Silicon on Insulator BCD

High-voltage BCD

Covering a wide voltage range

5 V to 40 V

40 V to 200 V

200 V to 1200 V

1200 V to 6000 V

Driving innovation in BCD

With its unique technical knowledge based on more than two decades of experience in the field, ST provides unrivaled technical support in order to guarantee the best BCD experience to its customers.

Discover our innovation roadmap.

Already available

The offer is divided into two types of BCD process:

High density
High voltage

0.32 µm

BCD6 / 6s

20 V - 100 V

BCD6s-OFFLINE

650 V - 800 V

BCD6s-SOI

100 V - 190 V

Galvanic Isolation (Inductive)

4 kV - 6 kV

0.16 µm

BCD8s-AUTO

40 V - 100 V

BCD8s-P

5 V - 60 V

BCD8s-SOI

100 V - 200 V

0.11 µm

BCD9s

5 V - 100 V

Being prototyped

They are being tested approved accross a best in class design process.

High density
High voltage

0.32 µm

BCD1200

1200V

Galvanic Isolation (capacitive)

6kV

0.11 µm

BCD110

5 V - 50 V

90 nm

BCD90

5 V - 50 V

Under development

The next generation of BCD technologies.

High density
High voltage

0.32 µm

Galvanic Isolation (capacitive)

10kV

40 nm

BCD40

5 V - 50 V

Discover the BCD applications

ST has the capability to customize its BCD technologies to optimally address the most demanding markets, including automotive, aerospace and certain segments of the industrial market. By taking into account all of the specificities of the targeted application from the earliest development stages,

ST can offer tailor-made solutions to its customers. Capitalizing on the strong synergy between technology, design and application, ST has also developed a rich set of development tools to aid in the design process for customers, allowing fast introduction of powerful and robust products to the market.