Brochures
User Manual
Conference Paper
- 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices
- 4H-SiC Defects Evolution by Thermal Processes
- An evaluation of the failures in resonant topologies due to the body diode and the role of fast diode MOSFET
- Analysis of the impacts of the VGSth in modern SMPS
- Automotive-grade P-Channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection
Technical Note
- TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
- TN1224 Mounting instructions for SMD (surface mounting device) packages
- TN1225 Mounting instructions for THD (through-hole device) packages
- TN1236 Leadless packages with enhanced board level solder joint reliability for automotive application
- TN1340 Recommendation for die sintering with Ag finishing
Product Presentation
Technical Article
Application Note
- AN1479 High-performance motor system for washing machines
- AN1506 A motor drives system for wheelchair applications
- AN1703 Guidelines for using ST's MOSFET smd Packages
- AN2344 Power MOSFET avalanche characteristics and ratings
- AN2385 Power dissipation and its linear derating factor, silicon limited drain current and pulsed drain current in MOSFETs
Flyers
- 1200-1700V MDmesh K5 SERIES: Ideal for high input voltage auxiliary power supply systems
- 250V-600V-650V MDmesh M9
- 300-1200 V MDmesh power MOSFETs
- 300-1200 V MDmesh: The most complete SJ MOSFETs offer for (H)EV power solutions
- 400/650 V MDmesh™ DM2: STPOWER Power MOSFET series with fast-recovery body diode