ST offers a comprehensive portfolio of IGBTs (insulated gate bipolar transistors) based on various process technologies optimized for diverse application needs. Ranging from 300 to more than 1200 V, the IGBT devices are available as bare die as well as packaged discrete components.

ST’s IGBT portfolio includes:

  • Planar punch-through (PT) IGBTs
  • Automotive-grade (AEC-Q101) IGBTs
  • Trench field-stop (TFS) IGBTs

ST’s IGBTs feature the best trade-off between conduction and switch-off energy losses tailored for different applications, such as general-purpose inverters, motor control, home appliances, UPS/SMPS, welding and induction heating, solar inverters and automotive.
Some of the highlights of our IGBT portfolio are as follows:

  • Low VCE(SAT) for reduced conduction losses
  • Improved switch-off energy spread versus increasing temperature resulting in reduced switching losses
  • Tight parameter distribution for design simplification and easy paralleling
  • Co-packaged tailored anti-parallel diode option for improved power dissipation and best thermal management


1200 V IGBT S series

Optimized for use in low-frequency (up to 8 kHz), hard-switching topologies, ST’s S series of 1200 V IGBTs feature the industry’s lowest V CE(sat) among 1200 V IGBTs currently on the market. Based on ST’s third-generation of trench-gate field-stop technology, they increase the efficiency of power supplies, welders and industrial motor drive applications thanks to the optimal trade-off between conduction and switching performance combined with outstanding robustness and EMI characteristics. Available in 15 A, 25 A and 40 A current ratings, they feature a 175°C maximum operating junction temperature, a 10 µs min short-circuit withstand time and a wide safe operating area (SOA).