ST's 550 V and 650 V MDmesh M5 super-junction high-voltage MOSFETs are optimized for high-power PFC and PWM topologies in hard-switching applications, such as solar power converters, power supplies for consumer products, electronic lighting controls and EV/HEV.
Our MDmesh M5 high-voltage MOSFET portfolio enables new generations of energy-conscious, compact and reliable electronic products, thanks to low on-state losses per silicon area combined with low gate charge (Qg) in a wide range of packages. This includes the new 4-lead TO247-4 package which features a dedicated control pin for increased switching efficiency, the 1-mm-high surface-mount PowerFLAT 8x8 HV and the PowerFLAT 5x6 HV featuring an exposed metal drain pad for efficient heat dissipation. These power MOSFETs belong to the STPOWER family.
STPOWER MOSFET key features and benefits
- Extremely low RDS(on) for increased efficiency and more compact designs
- Optimized trade-off between RDS(on) and capacitance profiles for increased performance in high-power PFC
Combined with state-of-the art packaging and protections for high reliability and safety, our wide STPOWER product portfolio helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.