With the STPOWER MDmesh M9 series, ST sets a benchmark for the 650V/600V super-junction technology combining best-in-class performance with remarkable ease of use. Furthermore, the series will be enlarged introducing the devices with 250V breakdown voltage. The innovative high-voltage super-junction STPOWER MDmesh M9 series delivers the best Figure of Merit (RDS(on)max x Qg) on the market as well as an approximately 30% reduction in on-state resistance compared to the previous technology, enabling designers
to increase the power density and obtain more compact system solutions.
Tailored for both hard- and soft-switching topologies, the MDmesh M9 series is ideal for telecom data-centers and servers, 5G power stations and solar microinverters as well as fast chargers, flat-panel displays and PC SMPS.
The MDmesh M9 series offers an improved reduction of maximum drain-source on-resistance compared to the previous technology (MDmesh M5 series) by package type (DPAK, TO-220, TO-247 long leads and PowerFLAT 8x8 HV).
- Increased power density, lower conduction losses and, more compact solution
- High efficiency and high switching speed due to low switching power losses
- Higher robustness and reliability with lower design complexity
|Part number||Industry’s best |
RDS(on) for 650V
|Lowest Qg||Higher reverse |
|Higher MOSFET |
|STP65N045M9||45 mΩ in TO-220||80 nC at 400V||50 V/ns at 400 V||120 V/ns at ≤ 400V|
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.