These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
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Quality and Reliability
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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
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Distributor availability ofSTB24N60M2
Distributor reported inventory date: 2020-09-22
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