These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB6N60M2
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