This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
From 400 V to 650 V. Discover our broad range of N-channel super-junction power MOSFETs.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STFU26N60M2
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Quality and Reliability
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-220FP ultra narrow leads||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
|Part Number||Order from distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STFU26N60M2|| distributors |
Distributor availability of STFU26N60M2
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|EAR99||NEC||Tube||TO-220FP ultra narrow leads||-||-||CHINA|| |
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