STGB50H65FB2

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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

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Product overview

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STGB50H65FB2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGB50H65FB2
Active
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package D2PAK Industrial Ecopack2

STGB50H65FB2

Package:

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Material Declaration**:

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Marketing Status

Active

General Description

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

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