Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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All features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB50H65FB2
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Symbols
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3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 06 Apr 2020 | 06 Apr 2020 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGB50H65FB2 | Active | Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package | D2PAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Country of Origin | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||||||||
| STGB50H65FB2 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tape and Reel | D2PAK | - | - | CHINA | Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package | | CHINA | Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package | ||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors