This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
- Low on-voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
Recommended for you
|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|N-channel 10 A, 600 V very fast IGBT||DPAK||Industrial||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.