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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Key Features
- High short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGF20M65DF2 |
Active
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Trench gate field-stop IGBT M series, 650 V 20 A low loss | TO-220FP | Industrial | Ecopack2 |
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STGF20M65DF2
Package:
Trench gate field-stop IGBT M series, 650 V 20 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGF20M65DF2 | 3 distributors | Sample & Buy Buy now |
Active
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EAR99 | NEC | Tube | TO-220FP | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 20 A low loss | 1.3 / 1k | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
