Product overview
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.-
All features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.55 V (typ.) at IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
Featured Videos
All tools & software
All resources
Resource title | Version | Latest update |
---|
Product Specifications (1)
Resource title | Version | Latest update | ||
---|---|---|---|---|
7.0 | 18 Mar 2021 | 18 Mar 2021 |
Application Notes (4)
Resource title | Version | Latest update | ||
---|---|---|---|---|
1.0 | 19 Mar 2021 | 19 Mar 2021 | ||
1.1 | 05 Apr 2022 | 05 Apr 2022 | ||
1.0 | 30 Jan 2019 | 30 Jan 2019 | ||
1.0 | 13 Sep 2018 | 13 Sep 2018 |
Technical Notes & Articles (1)
Resource title | Version | Latest update | ||
---|---|---|---|---|
1.0 | 19 Nov 2021 | 19 Nov 2021 |
Flyers (4)
Resource title | Version | Latest update | ||
---|---|---|---|---|
1.0 | 01 Apr 2022 | 01 Apr 2022 | ||
1.0 | 22 Oct 2018 | 22 Oct 2018 | ||
1.0 | 01 Apr 2022 | 01 Apr 2022 | ||
1.0 | 04 May 2020 | 04 May 2020 |
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
---|
SPICE models (1)
Resource title | Version | Latest update | ||
---|---|---|---|---|
ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|---|
STGW30H65FB | Active | Trench gate field-stop 650 V, 30 A high speed HB series IGBT | TO-247 | Industrial | Ecopack2 | |
STGW30H65FB
Package:
Trench gate field-stop 650 V, 30 A high speed HB series IGBTMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Country of Origin | General Description | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
min | max | ||||||||||||||
STGW30H65FB | 1 distributors | Active | EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | Trench gate field-stop 650 V, 30 A high speed HB series IGBT | | CHINA | Trench gate field-stop 650 V, 30 A high speed HB series IGBT |
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors