STGW40M120DF3

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Design Win

Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 10 μs of short-circuit withstand time
    • VCE(sat)= 1.85 V (typ.) @ IC= 40 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and fast recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGW40M120DF3

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGW40M120DF3
Active
TO-247 Industrial Ecopack2

STGW40M120DF3

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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EAR99 NEC Tube TO-247 -55 175 CHINA

STGW40M120DF3 Active

Package:
TO-247
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STGW40M120DF3

ECCN (EU):

NEC

Packing Type:

Tube

Operating Temperature (°C)

Min:

-55

Max:

175

Country of Origin:

CHINA

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Distributor reported inventory date:

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors