STGWA15M120DF3

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Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 10 μs of short-circuit withstand time
    • VCE(sat)= 1.85 V (typ.) @ IC= 15 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and fast recovery antiparallel diode

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STMicroelectronics - STGWA15M120DF3

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGWA15M120DF3
Active
TO-247 long leads Industrial Ecopack2

STGWA15M120DF3

Package:

TO-247 long leads

Material Declaration**:

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Marketing Status

Active

Package

TO-247 long leads

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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