This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
- 10 μs of short-circuit withstand time
- VCE(sat)= 1.85 V (typ.) @ IC= 15 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|TO-247 long leads||Industrial||Ecopack2|| |
Package:TO-247 long leads
TO-247 long leads
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.