Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.-
All features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
Featured Videos
All tools & software
All resources
| Resource title | Version | Latest update |
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Product Specifications (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 30 Apr 2020 | 30 Apr 2020 |
Application Notes (3)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.0 | 19 Mar 2021 | 19 Mar 2021 | ||
| 1.1 | 19 Mar 2021 | 19 Mar 2021 | ||
| 1.0 | 30 Jan 2019 | 30 Jan 2019 |
Flyers (5 of 6)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| 1.1 | 22 May 2020 | 22 May 2020 | ||
| 1.0 | 30 Apr 2021 | 30 Apr 2021 | ||
| 1.0 | 07 Jul 2020 | 07 Jul 2020 | ||
| 1.0 | 13 Nov 2020 | 13 Nov 2020 | ||
| 1.0 | 15 Jun 2021 | 15 Jun 2021 | ||
| 1.0 | 04 May 2020 | 04 May 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA20H65DFB2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 30 Apr 2020 | 30 Apr 2020 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA20H65DFB2 | Active | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 | |
STGWA20H65DFB2
Package:
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads packageMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGWA20H65DFB2 | 3 distributors | Buy Direct | Active | EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package | |||
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
