Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.-
All features
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
Featured Videos
All tools & software
All resources
Resource title | Latest update |
---|
Product Specifications (1)
Resource title | Latest update | |||
---|---|---|---|---|
30 Apr 2020 |
30 Apr 2020
|
Application Notes (3)
Resource title | Latest update | |||
---|---|---|---|---|
19 Mar 2021 |
19 Mar 2021
|
|||
19 Mar 2021 |
19 Mar 2021
|
|||
30 Jan 2019 |
30 Jan 2019
|
Flyers (5)
Resource title | Latest update | |||
---|---|---|---|---|
22 May 2020 |
22 May 2020
|
|||
18 Mar 2021 |
18 Mar 2021
|
|||
07 Jul 2020 |
07 Jul 2020
|
|||
13 Nov 2020 |
13 Nov 2020
|
|||
04 May 2020 |
04 May 2020
|
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Latest update |
---|
SPICE models (1)
Resource title | Latest update | |||
---|---|---|---|---|
ZIP | 30 Apr 2020 |
30 Apr 2020
|
Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|---|
STGWA20H65DFB2 |
Active
|
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 |
|
STGWA20H65DFB2
Package:
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads packageMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
min | max | |||||||||||||
STGWA20H65DFB2 | 4 distributors | Free Sample Buy Direct |
Active
|
EAR99 | NEC | Tube | TO-247 long leads | -55 | 175 | CHINA | Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads package |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors