STGWA40H120DF2

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Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
    • 5 μs minimum short circuit withstand time at TJ=150 °C
    • Safe paralleling
    • Very fast recovery antiparallel diode
    • Low thermal resistance

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STMicroelectronics - STGWA40H120DF2

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STGWA40H120DF2
Active
TO-247 long leads Industrial Ecopack2

STGWA40H120DF2

Package:

TO-247 long leads

Material Declaration**:

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Marketing Status

Active

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TO-247 long leads

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Industrial

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Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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