STGWA50IH65R
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Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

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Product overview

Description

The new reverse-conducting IGBT 650 V has been developed using an advanced proprietary trench gate field-stop structure with monolithic integrated body diode, whose performances are optimized both in conduction and switching losses for soft commutation.

The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

  • All features

    • Designed for soft-commutation only
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.45 V (typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Monolithic integrated diode with low voltage drop
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STGWA50IH65R

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STGWA50IH65R
Active
Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package TO-247 long leads Industrial Ecopack2 10 2026-04-15T00:00:00.000+02:00

STGWA50IH65R

Package:

Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

Material Declaration**:

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Marketing Status

Active

General Description

Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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General Description:

Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

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