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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 120 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
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Product Specifications (1)
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| 14 Sep 2017 |
14 Sep 2017
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Application Notes (2)
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| 13 Sep 2018 |
13 Sep 2018
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Flyers (2)
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04 May 2020
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Brochures (1)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGYA120M65DF2
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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HW Model, CAD Libraries & SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 07 Oct 2016 |
07 Oct 2016
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGYA120M65DF2 |
Active
|
Trench gate field-stop IGBT, M series 650 V, 120 A low loss | Max247 long leads | Industrial | Ecopack2 |
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STGYA120M65DF2
Package:
Trench gate field-stop IGBT, M series 650 V, 120 A low lossMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGYA120M65DF2 | 2 distributors | Free Sample Buy Direct |
Active
|
EAR99 | NEC | Tube | Max247 long leads | -55 | 175 | CHINA | Trench gate field-stop IGBT, M series 650 V, 120 A low loss | 6.6 / 1k | ||
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
