This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
- AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover the STripFET F7 series of low-voltage MOSFET, featuring an enhanced trench-gate structure.
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STMicroelectronics - STH80N10LF7-2AG
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