This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 3.3 x 3.3 HV||Industrial||Ecopack2||
Package:PowerFLAT 3.3 x 3.3 HV
PowerFLAT 3.3 x 3.3 HV
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.