This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
- Excellent FoM (figure of merit)
- Low Crss/Ciss ration for EMI immunity
- High avalanche ruggedness
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
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Quality and Reliability
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Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||ECCN (US)||ECCN (EU)||Packing Type||Package||Temperature (°C)||Country of Origin||Budgetary Price (US$)*/Qty|
|STL4N10F7||1 distributors||Sample & Buy Buy now||
|EAR99||NEC||Tape And Reel||PowerFLAT 3.3x3.3||-||-||CHINA||0.805 / 1k|