This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
- Designed for automotive applications and AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- Wettable flanks package
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|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 5x6 double island WF||Automotive||Ecopack2|| |
Package:PowerFLAT 5x6 double island WF
PowerFLAT 5x6 double island WF
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.