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This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Key Features
- Extremely low gate charge
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Sample & Buy
Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
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STL9N60M2 | PowerFLAT 5x6 HV | Tape And Reel | Active | - | - | EAR99 | CHINA | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
Featured Videos
Development Tools
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STL9N60M2 | Active | PowerFLAT 5x6 HV | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.