Product overview
Description
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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All features
- Designed for automotive application
- Standard level VGS(TH)
- 175°C junction temperature
- 100% avalanche rated
EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STP150N10F7AG | Active | TO-220 | Automotive | Ecopack1 | |
STP150N10F7AG
Package:
TO-220Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STP150N10F7AG | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tube | TO-220 | - | - | CHINA | |
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors