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These FDmesh II Plusâ„¢ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmeshâ„¢ technology: MDmesh II Plusâ„¢ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Key Features
- Extremely low gate charge and input capacitance
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STP24N60DM2 | TO-220AB | Tube |
Active
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- | - | EAR99 | MOROCCO | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
Featured Videos
Development Tools
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STP24N60DM2 |
Active
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TO-220AB | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
