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This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
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Product Specifications (1)
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28 Mar 2019 |
28 Mar 2019
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Application Notes (2)
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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User Manuals (1)
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21 Oct 2016 |
21 Oct 2016
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Flyers (1)
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
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HW Model, CAD Libraries & SVD (1)
Resource title | Latest update | |||
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ZIP | 24 Aug 2020 |
24 Aug 2020
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Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STR2P3LLH6 |
Active
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SOT-23 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STR2P3LLH6 | 7 distributors | Buy Direct |
Active
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EAR99 | NEC | Tape And Reel | SOT-23 | - | - | CHINA | 0.36 / 1k |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors