These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on)x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Extremely high dv/dt and avalanche capabilities
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