N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-247 package

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  • These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

    Key Features

    • Extremely low gate charge and input capacitance
    • Lower RDS(on)x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    • Extremely high dv/dt and avalanche capabilities

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Part Number
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
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STW24N60DM2 TO-247 Tube
Active
- - EAR99 CHINA Check Availability

Distributor availability ofSTW24N60DM2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 117 1 Order Now
ARROW EUROPE 180 0 Order Now
Newark Element14 AMERICA 140 0 Order Now
Farnell Element14 EUROPE 432 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

117

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

180

Min.Order

0

Region

EUROPE Order Now

Newark Element14

Stock

140

Min.Order

0

Region

AMERICA Order Now

Farnell Element14

Stock

432

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-07-16

Get sample

STW24N60DM2

Package

TO-247

Packing Type

Tube

Unit Price (US$)

*

Distributor availability ofSTW24N60DM2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 117 1 Order Now
ARROW EUROPE 180 0 Order Now
Newark Element14 AMERICA 140 0 Order Now
Farnell Element14 EUROPE 432 1 Order Now

Distributor reported inventory date: 2019-07-16

Distributor Name

DIGIKEY

Stock

117

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

180

Min.Order

0

Region

EUROPE Order Now

Newark Element14

Stock

140

Min.Order

0

Region

AMERICA Order Now

Farnell Element14

Stock

432

Min.Order

1

Region

EUROPE Order Now

Distributor reported inventory date: 2019-07-16

Marketing Status

Active

Unit Price (US$)

-

Quantity

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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Technical Documentation

    • Description Version Size Action
      DS10027
      N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
      3.0
      1.17 MB
      PDF
      DS10027

      N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

    • Description Version Size Action
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN2626
      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter
      1.4
      446.79 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN2626

      MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • Description Version Size Action
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • Description Version Size Action
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STW24N60DM2 PSpice model 1.0
      9.56 KB
      ZIP

      STW24N60DM2 PSpice model

Publications and Collaterals

    • Description Version Size Action
      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode 1.0
      342.97 KB
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      400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode

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Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW24N60DM2
Active
TO-247 Industrial Ecopack2

STW24N60DM2

Package:

TO-247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.