ST’s portfolio of silicon-carbide MOSFETs features the industry’s highest operating junction temperature rating of 200 °C and significantly reduced total power losses for more efficient, smaller and lighter systems.
They feature a very low on-state resistance (RDS(on)) per area even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature. Bring all the benefits of silicon-carbide MOSFETs to your system with ST’s SiC MOSFET technology.
|Key features||Their corresponding benefits|
|Low on-state resistance||Higher system efficiency & reduced cooling system dimensions|
|Unsurpassed on-state resistance over 200 °C||More performance stability at high temperatures|
|Higher switching frequency||More efficient applications|
|Reduced cooling system requirements||More compact PCB form factor|
|Higher breakdown voltage (10 times greater than silicon)||High voltage capability|
|Higher temperature applications (up to 200 °C)||More versatile|
|Lower switching loss||More energy savings|
|Small passive components||More compact and less heavy systems|
|Simple to drive||ST’s 2nd generation SiC MOSFETs can be easily driven at 18 V|
|Very fast and robust intrinsic body diode||No need for external freewheeling diodes|
|Complete ST in-house manufacturing process||Uncompromised quality and reliability|
Our portfolio includes a wide range of operating voltages for Industrial and Automotive applications such as traction inverters, on-board chargers & fast chargers, DC-DC converters, SMPS/high-end PFCs, auxiliary power supplies, and UPS/Solar/Welding.