ST’s portfolio of silicon-carbide MOSFETs features the industry’s highest operating junction temperature rating of 200 °C and significantly reduced total power losses for more efficient, smaller and lighter systems. 

They feature a very low on-state resistance (RDS(on)) per area even at high temperatures and excellent switching performance versus the best-in-class silicon technologies, with minimal variation versus temperature. Bring all the benefits of silicon-carbide MOSFETs to your system with ST’s SiC MOSFET technology. SiC MOSFETs are belonging to the STPOWER™ family.

Key features Their corresponding benefits
Low on-state resistance  Higher system efficiency & reduced cooling system dimensions
Unsurpassed on-state resistance over 200 °C  More performance stability at high temperatures
Higher switching frequency More efficient applications
Reduced cooling system requirements More compact PCB form factor
Higher breakdown voltage (10 times greater than silicon)  High voltage capability
Higher temperature applications (up to 200 °C) More versatile
Lower switching loss More energy savings
Small passive components More compact and less heavy systems
Simple to drive ST’s 2nd generation SiC MOSFETs can be easily driven at 18 V
Very fast and robust intrinsic body diode  No need for external freewheeling diodes
Complete ST in-house manufacturing process Uncompromised quality and reliability  

Our portfolio includes a wide range of operating voltages for Industrial and Automotive applications such as traction inverters, on-board chargers & fast chargers, DC-DC converters, SMPS/high-end PFCs, auxiliary power supplies, and UPS/Solar/Welding.

Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET

ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V SCTW100N65G2AG which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.