Rad-hard technologies include dedicated rad-hard libraries and hard IP, and may also involve specific tools and hardening methodologies.
Rad-capable technologies have intrinsic features that allow the development of rad-hard products 'by design', as proven through theoretical analysis, specific radiation tests, and flight history.
|Technology||Scope||Key features||Status||Technology||Scope||Key features||Status|
|28 nm FD-SOI||Digital, analog, RF||Available rad-hard platform and rad-hard IP||Flying LEO, GEO|
|65 nm||Digital, analog||Available rad-hard platform and rad-hard IP||QML-V Flying GEO|
|BICMOS55X||RF, digital||fT=365 GHz – fMAX=440 GHz||Development|
|BICMOS9MW||RF, digital||fT=365 GHz – fMAX=440 GHz||Flying LEO|
|HCMOS9A||Digital, analog||Flying GEO|
|BCD6s SOI||Power ICs||Up to 190 V||Flying GEO|
|Integrated Passive Device||RF filters||Flying GEO|
|CMOS||Image sensors and readout integrated circuits (ROICs)||Large pixels, IR, front-side illumination (FSI), back-side illumination (BSI), stitching||Flying GEO|
|28 nm FD-SOI||Technology||Scope||Key features||Status||Digital, analog, RF||Available rad-hard platform and rad-hard IP||Flying LEO, GEO|
|65 nm||Technology||Scope||Key features||Status||Digital, analog||Available rad-hard platform and rad-hard IP||QML-V Flying GEO|
|BICMOS55X||Technology||Scope||Key features||Status||RF, digital||fT=365 GHz – fMAX=440 GHz||Development|
|BICMOS9MW||Technology||Scope||Key features||Status||RF, digital||fT=365 GHz – fMAX=440 GHz||Flying LEO|
|HCMOS9A||Technology||Scope||Key features||Status||Digital, analog||Flying GEO|
|BCD6s SOI||Technology||Scope||Key features||Status||Power ICs||Up to 190 V||Flying GEO|
|Integrated Passive Device||Technology||Scope||Key features||Status||RF filters||Flying GEO|
|CMOS||Technology||Scope||Key features||Status||Image sensors and readout integrated circuits (ROICs)||Large pixels, IR, front-side illumination (FSI), back-side illumination (BSI), stitching||Flying GEO|
In more than 45 years, we have acquired unique expertise in the development of a wide variety of products hardened by design, by process, or using dedicated libraries and hardened macrocells for space, communications, and automotive applications.
Thousands of radiation tests of various technologies and products have led to the development of proprietary tools and methodologies. These tools are fully deployed in ST’s 65 nm and 28 nm FD-SOI rad-hard libraries. They allow performance, power dissipation, and die size optimization based on specific mission profiles.
Proprietary tools and methods*
Rad-hard IP and libraries*
* deployed for space in 65 nm and 28 nm FD-SOI
ST has developed a high degree of expertise in space quality assurance over several decades of involvement in space products and technologies, which is demonstrated by its unique triple ESCC, QML, and JAN certification. This expertise allows us to extend our certified capability domains to technologies and packages required for the most advanced space ASICs and ASSPs.
Space ASIC and Foundry+ customers can benefit from our ESCC and QML capability domains to achieve formal agency qualification or customized qualification tailored to specific mission profiles.
Technologies like 28 nm FD-SOI, 65 nm CMOS, and 130 & 55 nm BiCMOS (SiGe), are highly suitable for new developments. Some design houses have already used them to develop rad-hard components for space applications. ST is extending such support to other rad-capable technologies proposed for space ASICs and Foundry+.
Most of these technologies qualify for ST’s low-cost prototyping and multiproject wafer (MPW) services, although some restrictions may apply.
ST proposes different levels of contribution and added value, from a pure foundry model to pure ASIC.
Contact ST for more information on our ASIC
platforms and Foundry+ offer for space applications.