MOSFET and IGBT Gate Drivers, High Density Power Drivers
STGAP2S/D: Single/Dual-Channel 4A Gate Driver
The STGAP2D gate driver, integrates low-voltage control and interface circuitry with two isolated output channels that allow either unipolar or bipolar gate driving. Rated up to 1700V, the STGAP2D’s built-in isolation enhances safety as well as simplifying design and saving bill of materials and board space.
The two 26V rail-to-rail outputs with 4A gate-drive capability ensure strong performance in industrial motor drives and high-power inverters.
STGAP2S: Feature-Rich Galvanic Isolated Gate Driver
With 26V maximum gate-drive output voltage and optional separate turn-on/turn-off outputs or integrated active Miller clamp, the STGAP2S single-channel galvanic isolated gate driver can control silicon-carbide (SiC) or silicon MOSFETs and IGBTs across a range of switching topologies.
The STGAP2SCM has a dedicated active Miller clamp pin that provides a convenient solution to prevent unwanted transistor turn-on in half-bridge configurations.
MOSFET, IGBT Gate Drivers
STDRIVE gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications. With a range spanning from half-bridge, single and multiple-channel, high-current and galvanic isolated gate drivers rated for either low- or high-voltage applications. STDRIVE comes with extensive evaluation hardware and software as well as a technical documentation toolbox to help minimize time-to-market.
High Density Power Drivers
ST’s high-density power drivers are system-in-package (SiP), including smart full-bridge power stages made by optimized set of STDrive gate drivers and MOSFET-based power stages. With a set of protection circuitry in a single QFN package, they drive loads for industrial and home appliance applications with increased power density per square cm, reducing development time and EMI issues at PCB level, enabling a faster time to market.