The state-of-the-art MDmesh DM9 super-junction power MOSFETs are ST's latest fast-recovery diode MOSFET series, optimized for full-bridge phase-shifted ZVS topologies. These 600 and 650 V fast-recovery MOSFETs feature the best Figure of Merit (RDS(on) max x Qg) on the market, a very low recovery charge and time (Qrr, trr) and deliver up to 46% lower RDS(on) compared to the previous generation. The MDmesh DM9 series is available in a wide range of package options including TO-247 long leads, TO-220, TO-LL, PowerFLAT HV (8 x 8 mm) and SOT223-2. These power MOSFETs belong to the STPOWER family.
Ideal for equipment such as charging stations for electric vehicles, telecom data centers, 5G power stations, servers, solar inverters, UPS, and energy storage systems, the MDmesh DM9 series enables superior energy ratings with more robust performance and increased power density.
The MDmesh DM9 series offers an improved reduction of maximum drain-source on resistance compared to the previous technology (MDmesh DM6 series) by package type (TO-220, TO-LL, PowerFLAT 8x8 HV, and DPAK).
- Increased level of power
- Extremely high efficiency and increased power density
- Improved system reliability and robustness
- Higher operating frequencies and better thermal management
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.