These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
MDmesh M5 series: discover our broad range of high-voltage super-junction MOSFETs, optimized for high-power PFC and PWM topologies in hard switching applications.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB11N65M5
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