Product overview
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
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All features
- Very low FOM (RDS(on)·Qg)
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
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All resources
| Resource title | Version | Latest update | Actions | Details | Download |
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Product Specifications (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 2.0 | 15 Jan 2025 | 15 Jan 2025 |
Application Notes (4)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 1.0 | 12 Mar 2014 | 12 Mar 2014 | ||||
| 1.0 | 31 Jul 2009 | 31 Jul 2009 | ||||
| 1.0 | 03 Aug 2006 | 03 Aug 2006 | ||||
| 1.0 | 06 Jun 2014 | 06 Jun 2014 |
Technical Notes & Articles (4)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 2.0 | 01 Apr 2025 | 01 Apr 2025 | ||||
| 1.0 | 13 Dec 2013 | 13 Dec 2013 | ||||
| 2.0 | 22 May 2019 | 22 May 2019 | ||||
| 2.0 | 23 Nov 2023 | 23 Nov 2023 |
User Manuals (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 1.0 | 26 Nov 2013 | 26 Nov 2013 |
Flyers (5 of 8)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| 1.0 | 22 May 2023 | 22 May 2023 | ||||
| 1.0 | 24 Jun 2026 | 24 Jun 2026 | ||||
| 1.0 | 13 Apr 2023 | 13 Apr 2023 | ||||
| 1.0 | 15 Sep 2021 | 15 Sep 2021 | ||||
| 1.1 | 13 Apr 2023 | 13 Apr 2023 | ||||
| 1.0 | 19 Oct 2023 | 19 Oct 2023 | ||||
| 1.0 | 06 May 2022 | 06 May 2022 | ||||
| 1.0 | 08 May 2020 | 08 May 2020 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB25N018M9
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB25N018M9 | Active Product is in volume production. | D2PAK | Industrial | Ecopack2 | 10 | 2026-03-18T00:00:00.000+01:00 | |
STB25N018M9
Package:
D2PAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
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Sample & Buy
| Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB25N018M9 | | | distributors No availability of distributors reported, please contact our sales office |
STB25N018M9 Active
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors